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| U429B-FP Driver For IR Transmitter Diodes (Current Sink) Technology: Bipolar Features D D D D D Constant current for IR signal 320 mA Undervoltage control with indicator driver Constant current output for control LED 100 mA Current stabilisation starts at VCE = 1 V Control voltage V4 = 2 to 13.2 V Package: SO8 D Minimum driver current I4 = 0.4 mA D Additional switching transistor IC = 20 mA Figure 1. Block diagram Pin Description Pin 1 2 3 4 Symbol Ground VO VI VI Function Negative supply terminal Switching output (standby/ operation) Control input (standby/ operation) Signal input to drive the current source Pin 5 6 7 8 Symbol VS1 IO IO VS2 Function Positive supply voltage terminal Undervoltage indicator output (battery control) IR diode output signal Supply voltage for the control stages of constant current outputs TELEFUNKEN Semiconductors Rev. A1, 27-Feb-96 1 (4) U429B-FP Absolute Maximum Ratings Reference point Pin 1 Parameters Supply voltage Input voltage Output voltage Collector current Power dissipation Tamb = 80C Junction temperature Ambient temperature range Storage temperature range Symbol +VS1, S2 VI VO IC Ptot Tj Tamb Tstg Value 14 14 14 25 150 125 -40 to +85 -40 to +125 Unit V V V mA mW C C C Pins 5 and 8 Pins 3 and 4 Pins 2, 6 and 7 Pin 2 Thermal Resistance Parameters Junction ambient Symbol RthJA Volue 160 Unit K/W Electrical Characteristics VS1 = VS2 = 9 V, Tamb = 80C, reference point Pin 1, unless otherwise specified Parameters Supply voltage range Battery voltage control Switching threshold Regulated pulse output current IR-signal, V7 = 7 V Undervoltage indicator V6 = 4 V, @ VS1 = VS2 = 4.5 V IR-signal V7 = 3 V, @ VS1 = VS2 = 5 V Undervoltage indicator V6 = 3 V, @ VS1 = VS2 = 4.5 V Collector saturation voltage IR-signal i7 = 200 mA Undervoltage indicator i6 = 60 mA, VS1 = VS2 = 4.5 V Switching transistor I2 = 10 mA, V3 = 4 V I2 = 20 mA, V3 = 7 V Test Conditions / Pin Pin 5 Pin 8 U429B-FP Pin 5 Pin 7 Pin 6 Pin 7 Pin 6 Pin 7 Pin 6 Pin 2 Pin 2 Symbol VS1 VS2 VS1 IO IO IO IO VO VO VO VO Min. 2.8 2 6.35 240 71 192 71 Typ. Max. 13.2 13.2 7.15 400 125 328 118 0.8 0.8 100 500 Unit V V V mA mA mA mA V V mV mV 6.7 320 100 250 95 2 (4) TELEFUNKEN Semiconductors Rev. A1, 27-Feb-96 U429B-FP Parameters Collector leakage current IR-signal Undervoltage indicator Switching transistor Driver Switching transistor, internal Control voltage range Control current Input resistance Test Conditions / Pin Pin 7 Pin 6 Pin 2 Pin 8 Pin 5 Pin 3 Pin 4 Pin 3 Pin 4 Pin 3 Pin 4 Symbol ICEO ICEO ICEO IO IO VI VI II II RI RI Min. Typ. Max. 1 0.5 0.3 0.3 0.3 13.2 13.2 Unit mA mA mA mA mA V V mA mA kW kW 2.5 2.5 0.25 0.15 3 4 6 8 9 12 Dimensions in mm TELEFUNKEN Semiconductors Rev. A1, 27-Feb-96 3 (4) U429B-FP Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) TELEFUNKEN Semiconductors Rev. A1, 27-Feb-96 |
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